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Λεπτομέρειες
- Product Category: MOSFET
- Technology: Si
- Mounting Style: Through Hole
- Package/Case: TO-220FP-3
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Vds - Drain-Source Breakdown Voltage: 600 V
- Id - Continuous Drain Current: 6 A
- Rds On - Drain-Source Resistance: 1.25 Ohms
- Vgs - Gate-Source Voltage: 30 V
- Vgs th - Gate-Source Threshold Voltage: 4 V
- Qg - Gate Charge: 16 nC
- Minimum Operating Temperature: - 55 C
- Maximum Operating Temperature: + 150 C
- Channel Mode: Enhancement
- Configuration: Single
- Fall Time: 12 ns
- Height: 15 mm
- Length: 10 mm
- Pd - Power Dissipation: 40 W
- Rise Time: 20 ns
- Series: TK6A60D
- Transistor Type: 1 N-Channel
- Typical Turn-Off Delay Time: 60 ns
- Typical Turn-On Delay Time: 40 ns
- Width: 4.5 mm
