Product Category:MOSFET
RoHS: Details
Technology:Si
Mounting Style:SMD/SMT
Package/Case:SO-8
Transistor Polarity:P-Channel
Number of Channels:2 Channel
Vds - Drain-Source Breakdown Voltage:20 V
Id - Continuous Drain Current:5.3 A
Rds On - Drain-Source Resistance:98 mOhms
Vgs - Gate-Source Voltage:12 V
Qg - Gate Charge:19 nC
Minimum Operating Temperature:- 55 C
Maximum Operating Temperature:+ 150 C
Pd - Power Dissipation:2 W
Channel Mode:Enhancement
Configuration:Dual
Height:1.75 mm
Length:4.9 mm
Transistor Type:2 P-Channel
Type:Power MOSFET
Width:3.9 mm
Brand:Infineon / IR
Fall Time:49 ns
Rise Time:40 ns
Typical Turn-Off Delay Time:42 ns
Typical Turn-On Delay Time:15 ns